For significant issues of impurity doping and surface/interface control on device technology of various materials form conventional Si to new layered materials, process technologies based on visual understanding of atomic scale structures will be developed by utilizing the innovative analysis techniques in the “3D Active-Site Science”.

[TARGET 1] Detection of active-sites in semiconductor devices

Three dimensional atomic sites of doped impurities are detected correlated with their electrical activation, and atomic level structures and defects at surface/interface are visually revealed, on the semiconductor materials and their device structures.

[TARGET 2] Clarification of relations between 3D atomic structures of active-sites and device characteristics

Situations of active-sites in semiconductor materials and device structures are revealed by combination of analysis techniques in the “3D Active-Site Science”, and correlated to electrical characteristics of the devices.

[TARGET 3] Creation of new process technologies and verification on devices

Control of situation of the active-sites through process techniques is investigated, and advantages of the high functional active-sites are demonstrated on devices, to develop practical industrial applications.